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Curvature of Levels and Charge Stiffness of One-Dimensional Spinless Fermions

机译:一维无旋矩的水平曲率和电荷刚度   费米子

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摘要

Combining the Bethe Ansatz with a functional deviation expansion and using anasymptotic expansion of the Bethe Ansatz equations, we compute the curvature oflevels D_n at any filling for the one-dimensional lattice spinless fermionmodel. We use these results to study the finite temperature charge stiffnessD(T). We find that the curvature of the levels obeys, in general, the relationD_n=D_0+\delta D_n, where D_0 is the zero-temperature charge stiffness and\delta D_n arises from excitations. Away from half filling and for thelow-energy (gapless) eigenstates, we find that the energy levels are, ingeneral, flux dependent and, therefore, the system behaves as an idealconductor, with D(T) finite. We show that if gapped excitations are includedthe low-energy excitations feel an effective flux \Phi^{eff} which is differentfrom what is usually expected. At half filling, we prove, in the stronginteracting limit and to order 1/V (V is the nearest-neighbor Coulombinteraction), that the energy levels are flux independent. This leads to a zerovalue for the curvature of levels D_n and, as consequence, to D(T)=0, provingan earlier conjecture of Zotos and Prelov\v{s}ek.
机译:将Bethe Ansatz与功能偏差展开结合,并使用Bethe Ansatz方程的渐近展开,我们为一维晶格无旋费米子模型计算了任意填充时的水平D_n的曲率。我们使用这些结果来研究有限温度电荷刚度D(T)。我们发现,这些水平的曲率通常服从关系D_n = D_0 + \ delta D_n,其中D_0是零温度电荷刚度,而delta D_n由激励引起。除了半填充和低能(无隙)本征态,我们发现能级通常取决于通量,因此,系统表现为理想导体,D(T)是有限的。我们表明,如果包括空位激发,则低能激发会感觉到有效通量\ Phi ^ {eff},与通常预期的不同。在半填充时,我们证明了在强相互作用极限内并且达到1 / V(V是最近邻库仑相互作用)的能级与通量无关。这导致水平D_n的曲率为零值,因此导致D(T)= 0,这证明了Zotos和Prelov \ v {s} ek的更早猜想。

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